samhop microelectronics corp. symbol v ds v gs i dm a i d units parameter 60 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) max features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a www.samhop.com.tw 1 details are subject to change without notice. t c =25 c g s stu sris to-252aa(d-pa) std sris to-251(i-pa) p d c -55 to 150 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70 c w 12 6 17 42 4.8 27 a stu666s STD666S jul,15,2013 green product ver 1.0 126 @ vgs=4.5v 60v 6a 101 @ vgs=10v e g s d
symbol min typ max units bv dss 60 v 1 i gss 100 na v gs(th) v g fs s c iss 494 pf c oss 41 pf c rss 30 pf 10.3 10.7 19 8.4 t d(on) ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =30v i d =1a v gs =10v r gen = 6 ohm rise time turn-off delay time fall time turn-on delay time v ds =10v , i d =3a input capacitance output capacitance dynamic characteristics forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =48v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics c f=1.0mhz c www.samhop.com.tw 2 v sd nc q gs nc q gd 1.1 2.1 gate-drain charge gate-source charge diode forward voltage v ds =30v,i d =3a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =2a 0.82 1.3 v 1 1.7 3 15 jul,15,2013 ver 1.0 stu666s STD666S 81 m ohm v gs =10v , i d =3a r ds(on) drain-source on-state resistance 101 93 m ohm v gs =4.5v , i d =2.7a 126 q g nc 7.2 total gate charge v ds =30v,i d =3a,v gs =10v nc v ds =30v,i d =3a,v gs =4.5v 3.8 notes _ _ a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 30v.(see figure13) e.drain current limited by maximum junction temperature. _
stu666s STD666S ver 1.0 www.samhop.com.tw jul,15,2013 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 15 9 6 0 0 0.5 1 1.5 2 2.5 3 v gs =10v 15 12 9 6 3 0 0 0.8 4.8 4.0 3.2 2.4 1.6 tj=125 c -55 c 25 c 240 200 160 120 80 40 2.25 2.00 1.75 1.50 1.25 1.00 0 100 75 25 50 125 150 v gs =10v i d =3a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 3 v gs =10v v gs =4.5v 0.1 3 6 912 15 0 12 v gs =4.5v v gs =4.5v i d =2.7a v gs =4v 1 v gs =3.5v v gs =3v v ds =v gs i d =250ua
www.samhop.com.tw 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0 360 300 240 180 120 60 0 2 4 68 10 i d =3a 25 c 75 c 125 c ciss coss crss 720 600 480 360 240 120 0 10 15 20 25 30 0 5 v ds =30v i d =3a 0 10 8 6 4 2 0 1 234 5 6 7 8 110 100 1 10 100 td(off ) tr 0.1 1 10 100 10 1 0.1 v gs =10v single pulse t c =25 c 20 10 1 0 0.3 0.6 0.9 1.2 1.5 25 c 5 75 c 125 c vds=30v,id=1a vgs=10v 100 1 m s 1 0 ms d c r ds (on) limit jul,15,2013 ver 1.0 stu666s STD666S td(on) t f
www.samhop.com.tw 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve t p i as figure 13a. uncamped inductive test circuit unclamped inductive waveforms r g i as 0.01 t p d.u.t l v ds + - 20v v dd figure 13b. v (br)dss 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. 2. 3. 4. single pulse 1 r ja r ja(t)=r(t)* r ja=see datasheet t jm -t a =p dm * r ja(t) duty cycle,d= t 1 / t 2 jul,15,2013 ver 1.0 stu666s STD666S
ver 1.0 www.samhop.com.tw jul,15,2013 6 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067 stu666s STD666S
www.samhop.com.tw 7 package outline dimensions to-251 b3 d e d1 12 3 l4 e l5 h b4 b2 b e1 a c2 l c symbol millimeters inches min max min max e 6.400 6.731 l 3.980 4.280 l4 0.698 ref l5 0.972 1.226 6.000 d6.223 h 11.050 11.450 b 0.640 0.880 b2 0.770 1.140 5.210 b3 5.460 b4 0.450 0.550 e 2.286 bsc a 2.200 2.380 c 0.400 0.600 0.400 0.600 c2 d1 5.100 e1 4.400 0.252 0.265 0.157 0.169 0.027 ref 0.038 0.048 0.236 0.245 0.435 0.450 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.022 0.090 bsc 0.087 0.094 0.016 0.024 0.016 0.024 0.201 0.173 ver 1.0 jul,15,2013 stu666s STD666S
ver 1.0 www.samhop.com.tw jul,15,2013 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 - 0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 - 0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 " a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h stu666s STD666S
www.samhop.com.tw 9 top marking definition to-252 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) stu666s smc internal code no. (a,b,c...z) ver 1.0 stu666s STD666S jul,15,2013
www.samhop.com.tw 10 top marking definition to-251 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) STD666S smc internal code no. (a,b,c...z) ver 1.0 jul,15,2013 stu666s STD666S
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